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Same model may have multiple batches, images only for reference.
FQI4N20TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI4N20TU

Part No FQI4N20TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.6A I2PAK
Datasheet
FQI4N20TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6.5nC @ 10V
Max Input Capacitance 220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1039801-FQI4N20TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQI4N20TU CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance electronic component designed for use in a variety of applications.

  • Maximum Power Dissipation: 3.13W (Ta), 45W (Tc)
  • Channel Type: N-Channel
  • Mounting Type: Through-hole
  • Case: I2PAK
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.6A (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 1.8A, 10V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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