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Same model may have multiple batches, images only for reference.
FQI8N60CTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI8N60CTU

Part No FQI8N60CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1255pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040345-FQI8N60CTU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQI8N60CTU CAD Model

Description

The FQI8N60CTU is a MOSFET transistor manufactured by Fairchild/ON Semiconductor, suitable for applications requiring N-channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 3.13W (Ta), 147W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Tc): 7.5A
  • Supply and Demand: Limited
  • Package Quantity: 1k pcs
  • Recommended for: Applications requiring high performance and reliability

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3058 $58.7610
110+ $1.0715 $117.8650
170+ $1.0380 $176.4600
230+ $1.0045 $231.0350
300+ $0.9711 $291.3300
400+ $0.8706 $348.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,060 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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