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Same model may have multiple batches, images only for reference.
FQNL2N50BTA Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQNL2N50BTA

Part No FQNL2N50BTA
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 0.35A TO-92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 1.5W (Tc)
Maximum Rds On at Id,Vgs 5.3 Ohm @ 175mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 Long Body (Formed Leads)
Win Source Part Number 105013-FQNL2N50BTA
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FQNL2N50BTA CAD Model

Description

The FQNL2N50BTA is a N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor. Commonly used in power management applications.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 350mA
  • Gate Threshold Voltage: 3.7V
  • Commonly used in: Power supplies, motor control, and lighting applications

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