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Same model may have multiple batches, images only for reference.
FQP18N20V2 Real Image
Same model may have multiple batches, images only for reference.

FQP18N20V2

Part No FQP18N20V2
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 200V N-Channel MOSFET
Datasheet
FQP18N20V2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1080pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 123W (Tc)
Rds On (Maximum) @ Id, Vgs 140 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
Win Source Part Number 1175422-FQP18N20V2
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQP18N20V2
Introduction Date August 02, 2002
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQP18N20V2 CAD Model

Description

The Fairchild/ON Semiconductor FQP18N20V2 is an N-channel MOSFET with a drain-source voltage of 200V and a continuous drain current of 18A @ 25°C.

  • Manufacturer: Fairchild/ON Semiconductor
  • Drain-Source Voltage: 200V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Power Dissipation: 123W (Tc)
  • Maximum Rds On: 140 mOhm @ 9A, 10V
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Series: QFET
  • Status: Obsolete (EOL)
  • Gate Charge: 26nC @ 10Vgs
  • Input Capacitance: 1080pF @ 25Vds
  • Supply and Demand Status: Limited

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