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Same model may have multiple batches, images only for reference.
FQP22P10 Real Image
Same model may have multiple batches, images only for reference.

FQP22P10

Part No FQP22P10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 22A TO-220
Datasheet
FQP22P10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039836-FQP22P10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP22P10 CAD Model

Description

The Fairchild/ON Semiconductor FQP22P10 is a P-Channel MOSFET with a drain-source breakdown voltage of 100V.

  • Maximum Power Dissipation: 125W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On @ Id, Vgs: 125 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 1500pF @ 25V
  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Series: 74LVQ
  • Status: Obsolete(EOL)
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 86,500 pieces
MOQ: 140 pcs
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