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Same model may have multiple batches, images only for reference.
FQP2N80 Real Image
Same model may have multiple batches, images only for reference.

FQP2N80

Part No FQP2N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.4A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 6.3 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067426-FQP2N80
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP2N80 CAD Model

Description

The FQP2N80 is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 85W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2.4A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-220-3
  • Maximum Rds On: 6.3 Ohm @ 1.2A, 10V
  • Applications: Power Supplies, Motor Control Circuits, Lighting Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.2264 $58.8640
625+ $0.1860 $116.2500
965+ $0.1802 $173.8930
1,325+ $0.1744 $231.0800
1,715+ $0.1686 $289.1490
2,295+ $0.1513 $347.2335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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