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FQP32N20C

Part No FQP32N20C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 28A TO-220
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 016452-FQP32N20C
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP32N20C CAD Model

Description

The FQP32N20C is a MOSFET transistor manufactured by Fairchild/ON Semiconductor. Supply and demand status is limited.

  • Quantity per Package: 1k pcs
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 28A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Rds On: 82 mOhm @ 14A, 10V
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9217 $57.6510
65+ $1.5768 $102.4920
100+ $1.5276 $152.7600
140+ $1.4783 $206.9620
175+ $1.4290 $250.0750
235+ $1.2812 $301.0820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,153 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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