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Same model may have multiple batches, images only for reference.
FQP33N10 Real Image
Same model may have multiple batches, images only for reference.

FQP33N10

Part No FQP33N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 127W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 016453-FQP33N10
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP33N10 CAD Model

Description

The FQP33N10 is an N-Channel MOSFET from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 33A @ 25°C
  • Maximum Power Dissipation: 127W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 52 mOhm @ 16.5A, 10V
  • Case/Package: TO-220-3
  • Supply and Demand Status: Balance
  • Quantity per Package: 1k pcs (estimated)
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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