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Same model may have multiple batches, images only for reference.
FQP3N50C
Same model may have multiple batches, images only for reference.

FQP3N50C

Part No FQP3N50C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 365 pF @ 25 V
Power Dissipation (Max) 62W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 740 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 132589-FQP3N50C
Ultra Librarian 3D Model Ultra Librarian FQP3N50C CAD Model

Description

The 132589-FQP3N50C is a single N-channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 3A @ 25°C
  • On-Resistance (Rds On): 2.5Ohm @ 1.5A, 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Power Dissipation: 62W
  • Package: TO-220-3
  • Mounting: Through-Hole
  • Gate Charge (Qg): 13nC @ 10V
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7541 $60.3280
190+ $0.6188 $117.5720
290+ $0.5994 $173.8260
400+ $0.5802 $232.0800
515+ $0.5608 $288.8120
690+ $0.5028 $346.9320
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Availability: 4,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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