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FQP3N90

Part No FQP3N90
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 3.6A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 4.25 Ohm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067430-FQP3N90
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP3N90 CAD Model

Description

The FQP3N90 is a MOSFET electronic component manufactured by Fairchild/ON Semiconductor. This product is obsolete and has limited supply and demand.

  • Maximum Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Dimension: TO-220-3
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On: 4.25 Ohm @ 1.8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7223 $50.5610
170+ $0.5926 $100.7420
265+ $0.5741 $152.1365
360+ $0.5556 $200.0160
470+ $0.5371 $252.4370
625+ $0.4815 $300.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 146 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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