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FQP4N90C

Part No FQP4N90C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 960pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 067434-FQP4N90C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Family Name FQP4N90C
Introduction Date June 26, 2003
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FQP4N90C CAD Model

Description

The Fairchild/ON Semiconductor 067434-FQP4N90C is an N-channel MOSFET in a TO-220AB package.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 4A @ 25°C
  • Max Rds On: 4.2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 140W (Tc)
  • Max Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 22nC @ 10V
  • Max Input Capacitance: 960pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4948 $52.3180
85+ $1.2265 $104.2525
130+ $1.1882 $154.4660
175+ $1.1498 $201.2150
225+ $1.1115 $250.0875
305+ $0.9965 $303.9325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 112,459 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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