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FQP5N60

Part No FQP5N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V N-Channel MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175441-FQP5N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Lighting
Ultra Librarian 3D Model Ultra Librarian FQP5N60 CAD Model

Description

The FQP5N60 is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET leverages Fairchild's advanced QFET® technology to deliver low on-state resistance in conjunction with superior switching performance and robustness. It is suitable for applications requiring efficient power conversion and reliable operation.

Applications:

  • Switch-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • Electronic Ballasts for Lighting
  • DC-DC Converters
  • Motor Control

Features:

  • Low on-resistance (RDS(on)) minimizes conduction losses
  • Fast switching speed reduces switching losses
  • Low gate charge (Qg) simplifies gate drive design
  • High avalanche energy capability enhances reliability
  • Improved dv/dt ruggedness ensures stable operation
  • 600V Drain to Source Voltage (VDS)
  • 5A Continuous Drain Current (ID)

Benefits:

  • Improved energy efficiency due to reduced power dissipation.
  • Enhanced system performance due to faster switching speeds.
  • Simplified gate drive circuitry due to low gate charge.
  • Increased system reliability due to high avalanche energy and improved dv/dt capability.
  • Reduced heat sink requirements due to lower power losses.

Additional Details:

The FQP5N60 is typically packaged in a TO-220 package, which is widely used for power MOSFETs due to its ease of mounting and effective heat dissipation. The high voltage rating makes it suitable for high-voltage power conversion applications. The gate threshold voltage is carefully controlled for consistent performance. It can operate at junction temperatures up to 150°C, ensuring robust performance under various operating conditions. The fast body diode recovery time enhances performance in bridge circuits and synchronous rectification. The MOSFET's design minimizes parasitic elements, improving switching characteristics and reducing electromagnetic interference (EMI). It offers a cost-effective solution for applications that require high voltage capability and efficient power management. The FQP5N60 is designed for optimal performance in hard-switching topologies. It provides designers with a reliable and efficient solution for a wide range of power electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2298 $58.5990
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,260+ $0.1536 $347.1360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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