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Same model may have multiple batches, images only for reference.
FQP6N60C Real Image
Same model may have multiple batches, images only for reference.

FQP6N60C

Part No FQP6N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5.5A TO-220
Datasheet
FQP6N60C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 127243-FQP6N60C
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian FQP6N60C CAD Model

Description

The Fairchild/ON Semiconductor FQP6N60C is a MOSFET electronic component suitable for use in various industrial and power management applications.

  • Maximum Power Dissipation: 125W
  • Continuous Drain Current: 5.5A @ 25°C
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On: 2 Ohm @ 2.75A, 10V

It is recommended to use this component only if it is absolutely necessary.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6956 $50.8680
75+ $1.3913 $104.3475
115+ $1.3478 $154.9970
155+ $1.3044 $202.1820
200+ $1.2609 $252.1800
270+ $1.1304 $305.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 750 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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