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Same model may have multiple batches, images only for reference.
FQP7N10L Real Image
Same model may have multiple batches, images only for reference.

FQP7N10L

Part No FQP7N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 7.3A TO-220
Datasheet
FQP7N10L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6nC @ 5V
Max Input Capacitance 290pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 3.65A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039875-FQP7N10L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP7N10L CAD Model

Description

The Fairchild/ON Semiconductor FQP7N10L is a MOSFET technology-based N-Channel polarity product.

  • Package: TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 7.3A (Tc) @ 25°C
  • Gate-Source Voltage: ±20V
  • Rds On: 350 mOhm @ 3.65A, 10V
  • Gate Charge: 6nC @ 5V
  • Input Capacitance: 290pF @ 25V
  • Drive Voltage (Max Rds On, Min Rds On): 5V and 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: tube/rail
  • Status: obsolete (EOL)
  • Popularity: medium
  • Fake Threat: 60%
  • Supply and Demand: sufficient

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