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Same model may have multiple batches, images only for reference.
FQP7N65C Real Image
Same model may have multiple batches, images only for reference.

FQP7N65C

Part No FQP7N65C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 650V N-Channel MOSFET
Datasheet
FQP7N65C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1245pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 160W (Tc)
Rds On (Maximum) @ Id, Vgs 1.4 Ohm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
RoHS State Request Verification
Win Source Part Number 1175451-FQP7N65C
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQP7N65C
Introduction Date June 01, 2004
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQP7N65C CAD Model

Description

The Fairchild/ON Semiconductor FQP7N65C is a MOSFET technology electronic component with a current - continuous drain (Id) @ 25°C of 7A (Tc).

  • Series: QFET
  • Mounting Style: Through Hole
  • Package Type: TO-220-3
  • Gate Charge (Qg) (Maximum) @ Vgs: 36nC @ 10V
  • Power Dissipation (Maximum): 160W (Tc)
  • Application: Discrete semiconductor products such as power supplies, lighting, and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,195+ $0.2426 $289.9070
1,590+ $0.2183 $347.0970
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Availability: 10,300 pieces
MOQ: 180 pcs
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