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Same model may have multiple batches, images only for reference.
FQP85N06 Real Image
Same model may have multiple batches, images only for reference.

FQP85N06

Part No FQP85N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 85A TO-220
Datasheet
FQP85N06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 112nC @ 10V
Max Input Capacitance 4120pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 42.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1039883-FQP85N06
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP85N06 CAD Model

Description

The Fairchild/ON Semiconductor FQP85N06 is a MOSFET transistor that features a drain-source breakdown voltage of 60V and a continuous drain current of 85A (Tc).

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 85A (Tc)
  • Power Dissipation: 160W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-220AB
  • Temperature Range: -55°C to 175°C (TJ)
  • Package Quantity: 1,000

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