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Same model may have multiple batches, images only for reference.
FQP8N80C Real Image
Same model may have multiple batches, images only for reference.

FQP8N80C

Part No FQP8N80C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO-220
Datasheet
FQP8N80C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 178W (Tc)
Maximum Rds On at Id,Vgs 1.55 Ohm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040352-FQP8N80C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP8N80C CAD Model

Description

The Fairchild/ON Semiconductor FQP8N80C is a N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 8A (Tc)
  • Maximum Rds On: 1.55 Ohm @ 4A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Package: TO-220AB

The FQP8N80C is a common-used part with a high popularity and balanced supply and demand status, available with 1k pcs per package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,300 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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