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Same model may have multiple batches, images only for reference.
FQPF3N80CYDTU Real Image
Same model may have multiple batches, images only for reference.

FQPF3N80CYDTU

Part No FQPF3N80CYDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3A TO-220F
Datasheet
FQPF3N80CYDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.5nC @ 10V
Max Input Capacitance 705pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 4.8 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 1039926-FQPF3N80CYDTU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian FQPF3N80CYDTU CAD Model

Description

The Fairchild/ON Semiconductor FQPF3N80CYDTU is an N-Channel MOSFET with a maximum power dissipation of 39W and a drain-source breakdown voltage of 800V.

  • Channel Type: N-Channel
  • Power Dissipation: 39W
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-220F-3
  • Temperature Range: -55°C to 150°C
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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