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Same model may have multiple batches, images only for reference.
FQPF4N25 Real Image
Same model may have multiple batches, images only for reference.

FQPF4N25

Part No FQPF4N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 250V N-Channel MOSFET
Datasheet
FQPF4N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 200pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 32W (Tc)
Rds On (Maximum) @ Id, Vgs 1.75 Ohm @ 1.4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175481-FQPF4N25
Manufacturer Homepage www.fairchildsemi.com
Family Name FQPF4N25
Introduction Date May 17, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF4N25 CAD Model

Description

The FQPF4N25 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is a part of the QFET series and has a maximum power dissipation of 32W (Tc).

  • Channel Type: N-Channel
  • Series: QFET
  • Maximum Power Dissipation: 32W (Tc)
  • Drain-Source Voltage: 250V
  • Vgs(th) (Maximum) @ Id: 5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 200pF @ 25V
  • Maximum Rds On @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
  • Mounting: Through Hole
  • Package: TO-220-3 Full Pack
  • Status: Obsolete (EOL)
  • Family: FQPF4N25
  • Supply and Demand: Balanced

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