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Same model may have multiple batches, images only for reference.
FQPF4N50 Real Image
Same model may have multiple batches, images only for reference.

FQPF4N50

Part No FQPF4N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.3A TO-220F
Datasheet
FQPF4N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039935-FQPF4N50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF4N50 CAD Model

Description

The FQPF4N50 MOSFET is a N-channel polarized transistor with a maximum power dissipation of 35W (Tc).

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 2.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Package: TO-220F
  • Dimension: TO-220-3 Full Pack
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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175+ $0.9956 $174.2300
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415+ $0.8351 $346.5665
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