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Same model may have multiple batches, images only for reference.
SPN03N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPN03N60S5

Part No SPN03N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.7A SOT-223
Datasheet
SPN03N60S5 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 135μA
Max Gate Charge 12.8nC @ 10V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 065946-SPN03N60S5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPN03N60S5 CAD Model

Description

The Infineon Technologies 065946-SPN03N60S5 is a MOSFET transistor in N-Channel polarity.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 700mA @ 25°C
  • Maximum Rds on @ Id, Vgs: 1.4 Ohm @ 2A, 10V
  • Case/Package: PG-SOT223-4
  • Dimensions: TO-261-4, TO-261AA
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 5.5V @ 135μA
  • Maximum Gate Charge: 12.8nC @ 10V
  • Maximum Input Capacitance: 440pF @ 25V
  • Status: Obsolete(EOL)
  • Supply and Demand Status: Limited

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