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Same model may have multiple batches, images only for reference.
FQAF9P25 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQAF9P25

Part No FQAF9P25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 7.1A TO-3P
Datasheet
FQAF9P25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 620 mOhm @ 3.55A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension TO-3P-3 Full Pack
Win Source Part Number 067376-FQAF9P25
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQAF9P25 CAD Model

Description

The Fairchild/ON Semiconductor FQAF9P25 is a P-channel MOSFET designed for discrete semiconductor products.

  • Mounting: Through hole
  • Package: TO-3PF
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Rds On: 620 mOhm @ 3.55A, 10V
  • Power Dissipation (Max): 70W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL), limited supply and demand

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