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Same model may have multiple batches, images only for reference.
FQPF6N80CT Real Image
Same model may have multiple batches, images only for reference.

FQPF6N80CT

Part No FQPF6N80CT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 5.5A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1310pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 51W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 2.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 016470-FQPF6N80CT
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF6N80CT CAD Model

Description

The FQPF6N80CT is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor. It has an active status and a medium popularity.

  • Polarity: N-Channel
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active
  • Popularity: Medium
  • Power Dissipation (Max): 51W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current (25°C): 5.5A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1310pF @ 25V
  • Maximum Rds On (Id, Vgs): 2.5 Ohm @ 2.75A, 10V

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