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Same model may have multiple batches, images only for reference.
FQPF9N25C Real Image
Same model may have multiple batches, images only for reference.

FQPF9N25C

Part No FQPF9N25C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.8A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 001252-FQPF9N25C
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF9N25C CAD Model

Description

The FQPF9N25C is a N-Channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Supply and Demand: Balanced
  • Features: High-speed switching, low gate charge
  • Applications: Power supplies, DC-DC converters, motor control circuits
  • Drain-Source Breakdown Voltage (Max): 250V
  • Continuous Drain Current: 8.8A @ 25°C

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