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Same model may have multiple batches, images only for reference.
FQU13N10L Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU13N10L

Part No FQU13N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067478-FQU13N10L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQU13N10L CAD Model

Description

The FQU13N10L is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 10A at 25°C.

  • Rds On (Max): 180 mOhm at 5A and 10V
  • Gate-Source Threshold Voltage: 2V at 250μA
  • Maximum Gate Charge: 12nC at 5V
  • Maximum Input Capacitance: 520pF at 25V
  • Mounting Technology: Through Hole
  • Package: I-Pak
  • Power Dissipation: 2.5W (Ta), 40W (Tc)
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5301 $58.3110
270+ $0.4354 $117.5580
415+ $0.4216 $174.9640
570+ $0.4077 $232.3890
735+ $0.3939 $289.5165
985+ $0.3534 $348.0990
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Availability: 11,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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