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Same model may have multiple batches, images only for reference.
FQU1N50TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU1N50TU

Part No FQU1N50TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.1A IPAK
Datasheet
FQU1N50TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 5.5nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 550mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039983-FQU1N50TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU1N50TU CAD Model

Description

The Fairchild/ON Semiconductor FQU1N50TU is an N-channel MOSFET with a maximum power dissipation of 2.5W (Ta) and 25W (Tc).

  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Drive Voltage: 10V
  • Supply and Demand: Balanced
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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