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Same model may have multiple batches, images only for reference.
FQU1N60C Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU1N60C

Part No FQU1N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 6.2nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067481-FQU1N60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQU1N60C CAD Model

Description

The Fairchild/ON Semiconductor MOSFET with part number 067481-FQU1N60C is a through-hole component.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1A (Tc) @ 25°C
  • Maximum Rds On: 11.5 Ohm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 6.2nC @ 10V
  • Maximum Input Capacitance: 170pF @ 25V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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