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Same model may have multiple batches, images only for reference.
FQU2N80TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU2N80TU

Part No FQU2N80TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 1.8A IPAK / Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) IPAK Rail
Datasheet
FQU2N80TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 550pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2.5W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs 6.3 Ohm @ 900mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 774750-FQU2N80TU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 5,040
Family Name FQU2N80
Introduction Date September 01, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQU2N80TU CAD Model

Description

The FQU2N80TU is a MOSFET transistor from Fairchild/ON Semiconductor.

  • Drain-Source Voltage: 800V
  • Continuous Drain Current @ 25°C: 1.8A
  • Maximum Rds On: 6.3 Ohm @ 900mA and 10V
  • Gate Charge: 15nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Limited

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