The FQU4N20 is an N-Channel MOSFET manufactured by Fairchild Semiconductor (now ON Semiconductor). It's designed for high-speed switching applications. This MOSFET utilizes advanced planar stripe and DMOS technology to achieve low on-state resistance and superior switching performance.

Applications

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Power factor correction (PFC) circuits
• Motor control
• Lighting

Features

• Low gate charge (Qg)
• Low drain-source on-resistance (RDS(on))
• High voltage capability (200V)
• Fast switching speed
• Avalanche energy rated

Benefits

• Improved efficiency in power conversion applications
• Reduced power losses due to low RDS(on)
• Simplified thermal management
• High system reliability
• Enables smaller and lighter designs due to high switching frequency

Additional Details

The FQU4N20 is an N-Channel enhancement mode MOSFET. It has a drain-source voltage (VDS) rating of 200V and a continuous drain current (ID) of 3.6A. The on-resistance (RDS(on)) is typically 0.9 ohms at VGS = 10V. The gate charge (Qg) is typically 8.7 nC. It is available in a TO-251 (IPAK) and TO-252 (DPAK) package. This MOSFET is suitable for applications requiring efficient and reliable switching performance. It's designed to withstand high energy pulses in the avalanche and commutation modes.