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Same model may have multiple batches, images only for reference.
FQU5N60C Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU5N60C

Part No FQU5N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.8A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067484-FQU5N60C
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU5N60C CAD Model

Description

The Fairchild/ON Semiconductor 067484-FQU5N60C is an N-channel MOSFET with a drain-source breakdown voltage of 600V and continuous drain current at 25°C of 2.8A (Tc). The I-Pak case/package has a gate-source threshold voltage of 4V @ 250μA and a maximum Rds On at Id,Vgs of 2.5 Ohm @ 1.4A, 10V. The temperature range for operating is -55°C to 150°C (TJ). This discrete semiconductor product is ideal for use in electronic devices that require an N-channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8778 $61.4460
165+ $0.7207 $118.9155
250+ $0.6976 $174.4000
345+ $0.6757 $233.1165
445+ $0.6526 $290.4070
595+ $0.5856 $348.4320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,840 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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