The Fairchild/ON Semiconductor IGBT is a high power device with a maximum power dissipation of 290W and a collector-emitter saturation voltage (Max) of 2.7V @ 15V, 20A. The device has a maximum current collector of 70A and a VCEO maximum collector-emitter breakdown voltage of 600V. The IGBT has a total switching energy(Ets) of 105μJ (on), 150μJ (off) and a turn-on and turn-off delay time of 15ns/73ns. The device is packaged in a TO-247 case and can operate in a temperature range of -55°C to 150°C (TJ). The supply and demand status of the device is limited and it is not for new designs.