The HGTP12N60A4D is a through-hole IGBT transistor manufactured by Fairchild/ON Semiconductor. It has a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 54A. The reverse recovery time is 30ns, and the gate charge is 78nC. The transistor is packaged in a TO-220AB case, and the maximum power dissipation is 167W. The total switching energy for the transistor is 55μJ (on) and 50μJ (off). The turn-on and turn-off delay time is 17ns/96ns. The transistor is not for new designs and has a limited supply and demand status. The package contains 800 pieces.