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Same model may have multiple batches, images only for reference.
HUF75229P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75229P3

Part No HUF75229P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 44A TO-220AB
Datasheet
HUF75229P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 75nC @ 20V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044176-HUF75229P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF75229P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75229P3 is an N-channel MOSFET that has a maximum power dissipation of 90W (Tc).

  • Power Dissipation (Max): 90W (Tc)
  • Drive Voltage: 10V
  • Maximum Rds On: 22 mOhm @ 44A, 10V
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Temperature Range: -55°C to 175°C

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