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Same model may have multiple batches, images only for reference.
HUF75337P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75337P3

Part No HUF75337P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-220AB
Datasheet
HUF75337P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 109nC @ 20V
Max Input Capacitance 1775pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 068291-HUF75337P3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian HUF75337P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75337P3 is an N-Channel MOSFET with a maximum power dissipation of 175W (Tc). This product is packaged in a TO-220AB case and has a dimension of TO-220-3. The supply and demand status of this product is balanced. This product is used in power management, consumer electronics, portable devices, and industrial applications.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 14 mOhm @ 75A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6115 $60.0645
54+ $2.1437 $115.7598
84+ $2.0767 $174.4428
115+ $2.0097 $231.1155
149+ $1.9427 $289.4623
199+ $1.7417 $346.5983
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Availability: 1,740 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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