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Same model may have multiple batches, images only for reference.
HUF75337S3S Real Image
Same model may have multiple batches, images only for reference.

HUF75337S3S

Part No HUF75337S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
HUF75337S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 109nC @ 20V
Max Input Capacitance 1775pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068292-HUF75337S3S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF75337S3S CAD Model

Description

The HUF75337S3S is an N-Channel MOSFET from Fairchild/ON Semiconductor. It is a discrete semiconductor product that is used in power management applications.

  • Maximum Power Dissipation: 175W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A at 25°C
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Rds On: 14 mOhm at 75A and 10V
  • Package: D2PAK (TO-263AB)
  • Mounting: SMD (SMT)
  • Operating Temperature Range: -55°C to 175°C

This MOSFET is widely used in power management applications and has a medium popularity in the open market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.6207 $63.1035
12+ $10.3557 $124.2684
18+ $10.0323 $180.5814
24+ $9.7089 $233.0136
31+ $9.3855 $290.9505
42+ $8.4142 $353.3964
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