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Same model may have multiple batches, images only for reference.
HUF75542P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75542P3

Part No HUF75542P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 75A TO-220AB
Datasheet
HUF75542P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 20V
Max Input Capacitance 2750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044192-HUF75542P3
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUF75542P3 CAD Model

Description

The HUF75542P3 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 80V (Max)
  • Continuous Drain Current: 75A (Tc)
  • Power Dissipation: 230W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 180nC @ 20V (Max)
  • Input Capacitance: 2750pF @ 25V (Max)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Rds On: 14 mOhm @ 75A, 10V (Max)

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
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Availability: 53,300 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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