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Same model may have multiple batches, images only for reference.
HUF75925P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75925P3

Part No HUF75925P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 275mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 599756-HUF75925P3
Ultra Librarian 3D Model Ultra Librarian HUF75925P3 CAD Model

Description

The HUF75925P3 is an N-channel MOSFET transistor from Fairchild/ON Semiconductor's UltraFET series.

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 11A @ 25°C
  • Maximum On-Resistance (Rds On): 275mOhm @ 11A and 10V
  • Gate Charge (Qg): 78nC @ 20V
  • Input Capacitance (Ciss): 1030pF @ 25V
  • Mounting: Through-Hole
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 100W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4151 $63.6795
100+ $1.1612 $116.1200
155+ $1.1249 $174.3595
215+ $1.0886 $234.0490
275+ $1.0524 $289.4100
370+ $0.9434 $349.0580
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Availability: 10,000 pieces
MOQ: 45 pcs
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