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HUF76009P3

Part No HUF76009P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149005-HUF76009P3
Ultra Librarian 3D Model Ultra Librarian HUF76009P3 CAD Model

Description

The Fairchild/ON Semiconductor 149005-HUF76009P3 is a single N-channel MOSFET transistor from the UltraFET series.

  • Package: Bulk
  • Standard Package Size: 1 piece
  • Drain-to-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 20A @ 25°C
  • Maximum On-Resistance (Rds On): 27mOhm @ 20A and 10V
  • Gate Threshold Voltage (Vgs(th)): 3V @ 250µA
  • Power Dissipation: Up to 41W
  • Mounting: Through-hole mountable
  • Package: TO-220-3
  • Gate Charge (Qg): 13nC @ 10V
  • Input Capacitance (Ciss): 470pF @ 20V
  • Status: Active

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