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HUF76121P3

Part No HUF76121P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149019-HUF76121P3
Ultra Librarian 3D Model Ultra Librarian HUF76121P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF76121P3 is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).

  • Series: UltraFET™
  • Applications: Discrete semiconductor applications
  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 47A @ 25°C
  • On-Resistance (Rds On): 21mΩ @ 10V
  • Gate Threshold Voltage (Vgs(th)): 3V
  • Maximum Power: 75W
  • Mounting: Through-hole
  • Package: TO-220-3
  • Gate Charge (Qg): 30nC
  • Input Capacitance (Ciss): 850pF
  • Operating Temperature: -40°C to 150°C
  • Status: Active
  • Package: Bulk (1 piece)

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