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Same model may have multiple batches, images only for reference.
HUF76137P3 Real Image
Same model may have multiple batches, images only for reference.

HUF76137P3

Part No HUF76137P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 145W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149030-HUF76137P3
Ultra Librarian 3D Model Ultra Librarian HUF76137P3 CAD Model

Description

The HUF76137P3 is a N-channel MOSFET transistor from the UltraFET series by Fairchild/ON Semiconductor.

  • Type: N-channel MOSFET
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 75A at 25°C
  • Rds On (Max): 9mOhm at 75A and 10V
  • Gate Charge (Qg): 72nC at 10V
  • Input Capacitance (Ciss): 2100pF at 25V
  • Maximum Vgs: ±20V
  • Operating Temperature: -40°C to 150°C
  • Power Dissipation: 145W
  • Package: TO-220-3
  • Mounting: Through-Hole
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active

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