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Same model may have multiple batches, images only for reference.
HUFA75307T3ST Real Image
Same model may have multiple batches, images only for reference.

HUFA75307T3ST

Part No HUFA75307T3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2.6A SOT-223-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 20V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 133464-HUFA75307T3ST
Popularity Medium
Supply and Demand Status Limited
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian HUFA75307T3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA75307T3ST is an N-channel MOSFET.

  • Power Dissipation: 1.1W (Ta)
  • Mounting: Reel - TR
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 2.6A (Ta) at 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 17nC @ 20V
  • Input Capacitance: 250pF @ 25V
  • Gate-Source Voltage: ±20V
  • Rds On: 90 mOhm @ 2.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 36,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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