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Same model may have multiple batches, images only for reference.
HUFA75617D3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75617D3S

Part No HUFA75617D3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A DPAK
Datasheet
HUFA75617D3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 20V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 64W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 110094-HUFA75617D3S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75617D3S CAD Model

Description

The HUFA75617D3S is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation (Max): 64W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Status: Obsolete (EOL)
  • Package: TO-252AA

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Availability: 7,610 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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