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Same model may have multiple batches, images only for reference.
HUFA75617D3ST Real Image
Same model may have multiple batches, images only for reference.

HUFA75617D3ST

Part No HUFA75617D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A DPAK
Datasheet
HUFA75617D3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 20V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 64W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044258-HUFA75617D3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75617D3ST CAD Model

Description

The Fairchild/ON Semiconductor 1044258-HUFA75617D3ST is an N-channel MOSFET that comes in a TO-252AA package.

  • Maximum Power Dissipation: 64W
  • Continuous Drain Current: 16A @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250µA
  • Maximum Gate Charge: 39nC @ 20V
  • Maximum Input Capacitance: 570pF @ 25V
  • Product Status: Obsolete (EOL)

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