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Same model may have multiple batches, images only for reference.
HUFA75623S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75623S3ST

Part No HUFA75623S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 22A D2PAK
Datasheet
HUFA75623S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 20V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044259-HUFA75623S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75623S3ST CAD Model

Description

The HUFA75623S3ST is an N-channel MOSFET that is designed to provide a low on-resistance with a high current capability.

  • Current Handling: Up to 22A
  • Gate Charge: Low
  • Operating Temperature: -55°C to 175°C

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