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HUFA76409D3ST

Part No HUFA76409D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 485pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 49W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017084-HUFA76409D3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian HUFA76409D3ST CAD Model

Description

The Fairchild/ON Semiconductor 017084-HUFA76409D3ST is a MOSFET with an N-Channel polarity.

  • Mounting: SMD (SMT)
  • Package: TO-252AA
  • Power Dissipation: 49W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 18A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 15nC @ 10V
  • Input Capacitance (Max): 485pF @ 25V
  • Rds On (Max): 63 mOhm @ 18A, 10V
  • Supply/Demand: Balanced
  • Packaging: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,490+ $0.1940 $289.0600
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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