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Same model may have multiple batches, images only for reference.
HUFA76409P3 Real Image
Same model may have multiple batches, images only for reference.

HUFA76409P3

Part No HUFA76409P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A TO-220AB
Datasheet
HUFA76409P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 485pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 49W (Tc)
Maximum Rds On at Id,Vgs 62 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044275-HUFA76409P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76409P3 CAD Model

Description

The HUFA76409P3 is an N-Channel MOSFET designed for use in discrete semiconductor products manufactured by Fairchild/ON Semiconductor.

  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 18A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Rds On: 62 mOhm @ 18A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient

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