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HUFA76439S3ST

Part No HUFA76439S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 2745pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 155W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044295-HUFA76439S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76439S3ST CAD Model

Description

The HUFA76439S3ST MOSFET is a N-Channel polarity component that has a Drain-Source Breakdown Voltage of 60V and a Continuous Drain Current of 75A (Tc) @ 25°C.

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 84nC @ 10V
  • Maximum Rds On: 12 mOhm @ 75A, 10V
  • Power Dissipation (Max): 155W (Tc)
  • Package: D2PAK (TO-263AB)
  • Technology: MOSFET
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Mounting Type: SMD (SMT)

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