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HUFA76609D3

Name: HUFA76609D3
Brand: Fairchild/ON Semiconductor
SKU: 459419
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	HUFA76609D3
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 10A TO-251AA
Datasheet	HUFA76609D3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	16nC @ 10V
Max Input Capacitance	425pF @ 25V
Maximum Gate-Source Voltage	±16V
Power Dissipation (Max)	49W (Tc)
Maximum Rds On at Id,Vgs	160 mOhm @ 10A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-251AA
Dimension	TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number	1044300-HUFA76609D3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian HUFA76609D3 CAD Model

Alternative Products

Description

The Fairchild/ON Semiconductor HUFA76609D3 is an N-Channel MOSFET transistor.

Packaging: Tube/Rail
Mounting Style: Through-Hole
Temperature Range: -55°C to 175°C (TJ)
Power Dissipation (Max): 49W (Tc)
Status: Obsolete (EOL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 10A (Tc) @ 25°C
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 425pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On @ Id, Vgs: 160 mOhm @ 10A, 10V
Popularity: Medium
Supply and Demand: Sufficient

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HUFA76609D3

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