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HUFA76619D3S

Part No HUFA76619D3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 767pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044304-HUFA76619D3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76619D3S CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance electronic component designed for use in various applications.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Input Capacitance: 767pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On @ Id,Vgs: 85 mOhm @ 18A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Power Dissipation (max): 75W (Tc)
  • Continuous Drain Current @ 25°C: 18A (Tc)
  • Package: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drive Voltage: 4.5V, 10V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4708 $59.0036
41+ $2.8482 $116.7762
63+ $2.7593 $173.8359
87+ $2.6704 $232.3248
112+ $2.5814 $289.1168
150+ $2.3146 $347.1900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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