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IRF710B

Name: IRF710B
Brand: Fairchild/ON Semiconductor
SKU: 159814
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF710B
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Fairchild/ON Semiconductor
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 25 V
Power Dissipation (Max)	36W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	159814-IRF710B
Ultra Librarian 3D Model	Ultra Librarian IRF710B CAD Model

Description

The 159814-IRF710B is an N-Channel MOSFET transistor designed for discrete semiconductor applications. It is manufactured by Fairchild/ON Semiconductor.

Drain to Source Voltage (Vdss): 400V
Continuous Drain Current (Id): 2A @ 25°C
Maximum On-Resistance (Rds On): 3.4Ohm @ Id of 1A and a Gate-Source Voltage (Vgs) of 10V
Maximum Power Dissipation: 36W @ a case temperature (Tc) of 25°C
Mounting Type: Through-Hole
Package: TO-220-3
Gate Charge (Qg): 10nC @ a Vgs of 10V
Input Capacitance (Ciss): 330pF @ a Vds of 25V
Status: Active

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